Retention enhancement through capacitance-dependent voltage division analysis in 3D stackable TaOx/HfO2-based selectorless memristor
Abstract
Sneak path current generated by adjacent cells in three-dimensional (3D) memristor arrays must be curbed while securing the multi-bit storage capability of each cell to aid in the cost-effective increase in array size. For this purpose, a 3D stackable TaOx/HfO2-based selectorless memristor has been proposed and optimized via capacitance-dependent voltage division analysis. The proposed device utilizes the formation or rupture of conductive...
Paper Details
Title
Retention enhancement through capacitance-dependent voltage division analysis in 3D stackable TaOx/HfO2-based selectorless memristor
Published Date
Sep 1, 2021
Journal
Volume
207
Pages
109845 - 109845
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