The Formation and Structure of Thermomigration Silicon Channels Doped with Ga

Vertical through Si(Ga) p channels are created at 1450 K in c-Si(111) plates by thermomigration of local gallium zones. To this end, a technique is proposed and implemented for the formation of local zones consisting in the filling of linear grooves with a of width 60−100 μm and depth of 30−50 μm etched in the silicon plate with a fine-grained Ga powder. It is shown that a high yield of acceptable zones occurs with powder grains with a size of 5...