Field-driven modulating of In-Sn-O synaptic transistors with a precisely controlled weight update
Abstract
Multi-gate architectures in synaptic transistor are promising to implement the modulation on transport properties of channel and electrical performances of device. Here, we demonstrate a steep-slope In-Sn-O memtransistor with multi-gate design to simulate the synaptic functions with readily programmable plasticity. The working mechanism of field-driven modulating oxygen vacancies in In-Sn-O channel has been elaborately explored. Furthermore,...
Paper Details
Title
Field-driven modulating of In-Sn-O synaptic transistors with a precisely controlled weight update
Published Date
Jun 1, 2021
Journal
Volume
23
Pages
101024 - 101024
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