Field-driven modulating of In-Sn-O synaptic transistors with a precisely controlled weight update

Volume: 23, Pages: 101024 - 101024
Published: Jun 1, 2021
Abstract
Multi-gate architectures in synaptic transistor are promising to implement the modulation on transport properties of channel and electrical performances of device. Here, we demonstrate a steep-slope In-Sn-O memtransistor with multi-gate design to simulate the synaptic functions with readily programmable plasticity. The working mechanism of field-driven modulating oxygen vacancies in In-Sn-O channel has been elaborately explored. Furthermore,...
Paper Details
Title
Field-driven modulating of In-Sn-O synaptic transistors with a precisely controlled weight update
Published Date
Jun 1, 2021
Volume
23
Pages
101024 - 101024
Citation AnalysisPro
  • Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
  • Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.