Study of aluminum nitride films deposited on silicon for fabrication of MEMs devices

In this work, aluminum nitride (AlN) thin films deposited on the silicon (100) by RF magnetron-sputtering were analyzed. Nitrogen and argon plasmas were used in a vacuum system technique, being possible to obtain films oriented to the (oo2) crystallographic direction analyzed by X-ray diffraction (XRD) technique. Scanning electronic microscopy (SEM) was used to obtain the chemical composition (% at.) of AlN thin films. SEM analyses were...