Subnanoscale Investigation of the Interface Between c-Si and PECVD AlO_xand Its Effect on Surface Passivation

We present a subnanometer scale study of the interface between crystalline silicon (c-Si) and aluminum oxide (AlO _x ) deposited by an industrial type, remotely plasma-enhanced chemical vapor deposition (PECVD) system. We investigate the origin of the negative charge density within the AlO _{Read more}