Subthreshold slope

Physics

Hysteresis

Mathematical analysis

Thermionic emission

Field-effect transistor

Electron

Current (fluid)

Limit (mathematics)

Voltage

Nanotechnology

Transistor

Materials science

Condensed matter physics

Graphene

Mathematics

Optoelectronics

Quantum mechanics

Thermodynamics

Nano Letters

In the continuous transistor feature size scaling down, the scaling of the supply voltage is stagnant because of the subthreshold swing (SS) limit. A transistor with a new mechanism is needed to break through the thermionic limit of SS and hold the large drive current at the same time. Here, by adopting the recently proposed Dirac-source field-effect transistor (DSFET) technology, we experimentally demonstrate a MoS2/graphene (1.8 nm/0.3 nm) DSFET for the first time, and a steep SS of 37.9 mV/dec at room temperature with nearly free hysteresis is observed. Besides, by bringing in the structure of gate-all-around (GAA), the MoS2/graphene DSFET exhibits a steeper SS of 33.5 mV/dec and a 40% increased normalized drive current up to 52.7 μA·μm/μm (VDS = 1 V) with a current on/off ratio of 108, which shows potential for low-power and high-performance electronics applications.

A Steep-Slope MoS<sub>2</sub>/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current

A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current

A Steep-Slope MoS₂/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current