Transient optical non-linearity in p-Si induced by a few cycle extreme THz field

We study the impact of a few cycle extreme terahertz (THz) radiation (the field strength E THz ∼1–15 MV/cm is well above the DC-field breakdown threshold) on a p -doped Si wafer. Pump-probe measurements of the second harmonic of a weak infrared probe were done at different THz field strengths. The second harmonic yield has an unusual temporal behavior and does not follow the common instantaneous response, Read more