Electron mobility

Electronics

Materials science

Photodetector

Gallium nitride

Optoelectronics

Engineering

Power semiconductor device

Power (physics)

Substrate (aquarium)

Physics

Geology

Nanotechnology

Quantum mechanics

Figure of merit

Band gap

Semiconductor

Electrical engineering

Engineering physics

Oceanography

Ohmic contact

Layer (electronics)

Doping

Journal of Physics D Applied Physics

Gallium oxide (Ga 2 O 3 ), an emerging ultra-wide-bandgap semiconductor, has the desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field of 8 MV cm −1 , decent electron mobility of 250 cm 2 V s −1 and high theoretical Baliga figures of merit (BFOMs) of around 3000. Bolstered by their capability of an economical growth technique for high-quality bulk substrate, β -Ga 2 O 3 -based materials and devices have been highly sought after in recent years for power electronics and solar-blind ultraviolet photodetectors. This article reviews the most recent advances in β -Ga 2 O 3 power device technologies. It will begins with a summary of the field and underlying semiconductor properties of Ga 2 O 3 , followed by a review of the growth methods of high-quality β -Ga 2 O 3 bulk substrates and epitaxial thin films. Then, brief perspectives on the advanced technologies and measurements in terms of ohmic contact and interface state are provided. Furthermore, some state-of-the-art β -Ga 2 O 3 photoelectronic devices, power devices and radiofrequency devices with distinguished performance are fully described and discussed. Some solutions to alleviating challenging issues, including the difficulty in p-type doping, low thermal conductivity and low mobility, are also presented and explored.

Progress in state-of-the-art technologies of Ga<sub>2</sub>O<sub>3</sub>devices

Progress in state-of-the-art technologies of Ga2O3devices

Progress in state-of-the-art technologies of Ga₂O₃devices