Physics

Geology

Laser linewidth

Nanotechnology

Electrical conductor

Laser

Doppler broadening

Optics

Astronomy

Oceanography

Dielectric

Homogeneous broadening

Composite material

Chemistry

Materials science

Condensed matter physics

Substrate (aquarium)

Graphene

Molecular physics

Spectral line

Hexagonal boron nitride

Optoelectronics

Physical Review Applied

We report a reduction in the linewidth and suppression of spectral diffusion of quantum emitters in hexagonal boron nitride supported on a conductive substrate. We observe a temperature-dependent reduction in the spectral emission linewidth for CVD-grown and exfoliated crystals on conductive ITO relative to those seen on silicon dioxide (${\mathrm{Si}\mathrm{O}}_{2}$) substrates. We show that the inhomogeneous linewidth can be suppressed by 45% as a result of using a conductive substrate. We investigate the zero-phonon line profile at temperatures ranging from 4 to 300 K and decompose the effects of thermal broadening and spectral diffusion at each temperature by Voigt fitting. The temperature dependence of homogeneous and inhomogeneous components of the broadening is discussed.

Temperature-dependent Spectral Emission of Hexagonal Boron Nitride Quantum Emitters on Conductive and Dielectric Substrates