Consequence of Galvanic Displacement Reaction on Digital Photocorrosion of GaAs/Al0.35Ga0.65As Nanoheterostructures
Volume: 124, Issue: 50, Pages: 27772 - 27779
Published: Dec 8, 2020
Abstract
GaAs/AlGaAs semiconductor nanoheterostructures have found attractive application in the field of biosensing based on the effect of digital photocorrosion (DIP). The sensitivity of semiconductor–nanoheterostructure-based biosensors depends on the precision of controlling the process of DIP, which is highly sensitive to the surface presence of electrically charged biomolecules. To explore further this process, we have investigated the role of a...
Paper Details
Title
Consequence of Galvanic Displacement Reaction on Digital Photocorrosion of GaAs/Al0.35Ga0.65As Nanoheterostructures
Published Date
Dec 8, 2020
Volume
124
Issue
50
Pages
27772 - 27779
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