Experimental evaluation of the dynamic route map in the reset transition of memristive ReRAMs

In this paper, we analyze the reset transition in bipolar TiN/Ti/HfO2 (10 nm)/Al2O3(2 nm)/W ReRAM devices using a tool that allows studying the temporal behaviour of these devices. This tool, the Dynamic Route Map (DRM), provides information about the temporal evolution of the state variable that governs the behaviour of the device, thus allowing an increased insight into resistive switching processes. Here, we show that this DRM is a powerful...