Thermal Conductivities and Interfacial Thermal Conductance of 1- to 3-Layer WSe_2

Published on Oct 30, 2020in arXiv: Materials Science
Xian Zhang9
Estimated H-index: 9
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Abstract
Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides have attracted extensive interest in recent years, motivating investigation into multiple properties. In this work, we used the opto thermal Raman technique to measure the thermal transport properties of a popular TMDC material WSe_2 in single atomic layer, bilayer, and trilayer forms.
References57
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#1Shrawan Roy (SKKU: Sungkyunkwan University)H-Index: 10
#2Anir S. Sharbirin (SKKU: Sungkyunkwan University)H-Index: 2
Last. Jeongyong Kim (SKKU: Sungkyunkwan University)H-Index: 28
view all 9 authors...
In general, the quantum yields (QYs) of monolayer transition metal dichalcogenides (1L-TMDs) are low, typically less than 1% in their pristine state, significantly limiting their photonic applications. Many methods have been reported to increase the QYs of 1L-TMDs; however, the technical difficulties involved in the reliable estimation of these QYs have prevented the general assessment of these methods. Herein, we demonstrate the estimation of the QYs of 1L-TMDs using a poly methyl methacrylate ...
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Atomically thin materials such as semiconducting transition metal diselenide materials, like molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2), have received intensive interests in recent years due to their unique electronic structure, bandgap engineering, ambipolar behavior, and optical properties and have motivated investigations for the next-generation semiconducting electronic devices. In this work, we show a nondestructive method of characterizing the layer number of two-dimensio...
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#1Qiran Cai (Deakin University)H-Index: 18
#2Declan Scullion ('QUB': Queen's University Belfast)H-Index: 14
Last. Lu Hua Li (Deakin University)H-Index: 40
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Heat management has become more and more critical, especially in miniaturized modern devices, so the exploration of highly thermally conductive materials with electrical insulation is of great importance. Here, we report that high-quality one-atom-thin hexagonal boron nitride (BN) has a thermal conductivity (κ) of 751 W/mK at room temperature, the second largest κ per unit weight among all semiconductors and insulators. The κ of atomically thin BN decreases with increased thickness. Our molecula...
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#1Henry Chan (Argonne National Laboratory)H-Index: 17
#2Kiran Sasikumar (Argonne National Laboratory)H-Index: 13
Last. Subramanian K. R. S. Sankaranarayanan (U of C: University of Chicago)H-Index: 37
view all 6 authors...
Nanostructures of transition metal di-chalcogenides (TMDCs) exhibit exotic thermal, chemical and electronic properties, enabling diverse applications from thermoelectrics and catalysis to nanoelectronics. The thermal properties of these nanoscale TMDCs are of particular interest for thermoelectric applications. Thermal transport studies on nanotubes and nanoribbons remain intractable to first principles calculations whereas existing classical molecular models treat the two chalcogen layers in a ...
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#1Chao Yuan (UoB: University of Bristol)H-Index: 12
#2Jiahan Li (KSU: Kansas State University)H-Index: 9
Last. Martin Kuball (UoB: University of Bristol)H-Index: 58
view all 8 authors...
Hexagonal boron nitride (h-BN) has been predicted to exhibit an in-plane thermal conductivity as high as ~ 550 W m−1 K−1 at room temperature, making it a promising thermal management material. However, current experimental results (220–420 W m−1 K−1) have been well below the prediction. Here, we report on the modulation of h-BN thermal conductivity by controlling the B isotope concentration. For monoisotopic 10B h-BN, an in-plane thermal conductivity as high as 585 W m−1 K−1 is measured at room ...
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#1Hamidreza Zobeiri (Iowa State University)H-Index: 8
#2Ridong Wang (Iowa State University)H-Index: 13
Last. Xinwei Wang (Iowa State University)H-Index: 38
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Abstract Temperature-dependent Raman properties calibration and laser absorption evaluation are two significant sources of error in measurement of nm-thick materials thermal conductivity based on steady state Raman spectroscopy. A new Raman probing technique, frequency-domain energy transport state-resolved Raman (FET-Raman), is developed to resolve these issues and improve the measurement precision significantly. The FET-Raman uses a steady-state laser and an amplitude-modulated square wave las...
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#1Mahito Yamamoto (Osaka University)H-Index: 17
#2Ryo Nouchi (OPU: Osaka Prefecture University)H-Index: 18
Last. Hidekazu Tanaka (Osaka University)H-Index: 51
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Vanadium dioxide (VO2) shows promise as a building block of switching and sensing devices because it undergoes an abrupt metal–insulator transition (MIT) near room temperature, where the electrical resistivity changes by orders of magnitude. A challenge for versatile applications of VO2 is to control the MIT by gating in the field-effect device geometry. Here, we demonstrate a gate-tunable abrupt switching device based on a VO2 microwire that is monolithically integrated with a two-dimensional (...
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#7Der Hsien Lien (LBNL: Lawrence Berkeley National Laboratory)H-Index: 20
In recent years, there have been tremendous advancements in the growth of monolayer transition metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). However, obtaining high photoluminescence quantum yield (PL QY), which is the key figure of merit for optoelectronics, is still challenging in the grown monolayers. Specifically, the as-grown monolayers often exhibit lower PL QY than their mechanically exfoliated counterparts. In this work, we demonstrate synthetic tungsten diselenide (W...
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#1Kunpeng Yuan (DUT: Dalian University of Technology)H-Index: 9
#2Xiaoliang Zhang (DUT: Dalian University of Technology)H-Index: 22
Last. Dawei Tang (DUT: Dalian University of Technology)H-Index: 27
view all 4 authors...
In this paper, first-principles calculations along with the phonon Boltzmann transport equation are used to study the strain- and size-dependent thermal conductivity of monolayer WSe2. The thermal conductivity of monolayer WSe2 is primarily contributed by the acoustic phonons and decreases with tensile strain due to the reduction in both the group velocity and phonon lifetime. Shrinking the system size also restricts the thermal conductivity significantly by ruling out the contributions of long ...
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#5Xian Zhang (UB: University at Buffalo)H-Index: 9
: A systematic colloidal synthesis approach to prepare tin(II, IV) chalcogenide nanocrystals with controllable valence and morphology is reported, and the preparation of solution-processed nanostructured thermoelectric thin films from them is then demonstrated. Triangular SnS nanoplates with a recently-reported π-cubic structure, SnSe with various shapes (nanostars and both rectangular and hexagonal nanoplates), SnTe nanorods, and previously reported Sn(IV) chalcogenides, are obtained using diff...
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Abstract null null This work proposes a very simple and exact analytical method for analysis of laser-induced steady-state heat transfer in supported two-dimensional (2D) materials over an infinite domain. The present method uses Hankel transform and special Meijer's G-functions to solve the heat diffusion equation in order to avoid the use of numerical methods at any stages of the solution. Herein, a concise description on the mathematical and physical assumptions required to apply the method, ...
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