3D-graphene-laser patterned p-type silicon Schottky diode

The influence of the laser patterning (LP) process on the quality of graphene (Gr) film and Schottky diode characteristics was researched in this study. First of all, p-type silicon (Si) was patterned by homemade femtosecond laser source. To compare the resulting effect, non-patterned n-Si and p-Si were used as substrates. To achieve vertically oriented three-dimensional (3D) Gr nanosheets (VGNs) onto the laser patterned p-type Si, non-patterned...