Nonlinear Modeling and Verification of a Domestically Developed Gallium Nitride High-Electron-Mobility Transistor

This paper discusses the parameter measurement, modeling process, and verification results for nonlinear modeling using a domestically developed gallium nitride high-electron-mobility transistor device. To extract linear and nonlinear parameters, the pulsed I-V and S-parameters were measured under various conditions, and nonlinear modeling was conducted for all the bias points. The results of the nonlinear modeling were compared with those of...