Flexoelectronics of centrosymmetric semiconductors

Interface engineering by local polarization using piezoelectric1–4, pyroelectric5,6 and ferroelectric7–9 effects has attracted considerable attention as a promising approach for tunable electronics/optoelectronics, human–machine interfacing and artificial intelligence. However, this approach has mainly been applied to non-centrosymmetric semiconductors, such as wurtzite-structured ZnO and GaN, limiting its practical applications. Here we...