Direct CVD Growth of a Graphene/MoS₂ Heterostructure with Interfacial Bonding for Two-Dimensional Electronics

This article describes a novel method for the direct synthesis of patterned graphene on transition-metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) with chemical vapor deposition (CVD) that uses a UV/ozone-treated solid carbon source, 1,2,3,4-tetraphenylnaphthalene (TPN) as the graphene growth precursor. The UV/ozone treatment of the TPN film on the MoS2 layer improves the interfacial adhesion between the TPN and MoS2 layers. The...