Enabling room temperature ferromagnetism in monolayer MoS2 via in situ iron-doping

Volume: 11, Issue: 1
Published: Apr 27, 2020
Abstract
Two-dimensional semiconductors, including transition metal dichalcogenides, are of interest in electronics and photonics but remain nonmagnetic in their intrinsic form. Previous efforts to form two-dimensional dilute magnetic semiconductors utilized extrinsic doping techniques or bulk crystal growth, detrimentally affecting uniformity, scalability, or Curie temperature. Here, we demonstrate an in situ substitutional doping of Fe atoms into MoS 2...
Paper Details
Title
Enabling room temperature ferromagnetism in monolayer MoS2 via in situ iron-doping
Published Date
Apr 27, 2020
Volume
11
Issue
1
Citation AnalysisPro
  • Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
  • Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.