Initialization

Electrical engineering

Engineering

Voltage

Nanotechnology

Political science

Non-volatile memory

Resistive random-access memory

Materials science

Programming language

Commercialization

Data retention

Computer science

Optoelectronics

Engineering physics

IEEE Transactions on Electron Devices

This article reviews the resistive random-access memory (ReRAM) technology initialization back in the 1960s and its heavily focused research and development from the early 2000s. This review goes through various oxygen/oxygen vacancy and metal-ion-based ReRAM devices and their operation mechanisms. This review also benchmarks the performance of various oxygen/oxygen vacancy and metal-ion-based ReRAM devices with general trend drawn. Being a semiconductor memory and storage technology, the commercialization attempts for both stand-alone mass storage/storage-class memory and embedded nonvolatile memory are also reviewed. Looking toward the coming era, the potential of using ReRAM technology to improve machine learning efficiency is discussed.

ReRAM: History, Status, and Future