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doi.org/10.1109/ted.2019.2961505
Review paper
ReRAM: History, Status, and Future
Yangyin Chen
1
View all 1 authors
IEEE Transactions on Electron Devices
3.20
Volume: 67, Issue: 4, Pages: 1420 - 1433
Published
: Apr 1, 2020
186
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Paper Fields
Initialization
Electrical engineering
Engineering
Voltage
Nanotechnology
Political science
Non-volatile memory
Resistive random-access memory
Materials science
Programming language
Law
Commercialization
Data retention
Computer science
Optoelectronics
Engineering physics
Paper Details
Title
ReRAM: History, Status, and Future
DOI
doi.org/10.1109/ted.2019.2961505
Published Date
Apr 1, 2020
Journal
IEEE Transactions on Electron Devices
Volume
67
Issue
4
Pages
1420 - 1433
Notes
History
View all history