Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack

Volume: 2019, Issue: 12, Pages: 124026
Published: Dec 27, 2019
Abstract
No abstract.
Paper Details
Title
Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack
Published Date
Dec 27, 2019
Volume
2019
Issue
12
Pages
124026
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