Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack
Volume: 2019, Issue: 12, Pages: 124026
Published: Dec 27, 2019
Abstract
No abstract.
Paper Details
Title
Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack
Published Date
Dec 27, 2019
Volume
2019
Issue
12
Pages
124026
Citation AnalysisPro
You’ll need to upgrade your plan to Pro
Looking to understand the true influence of a researcher’s work across journals & affiliations?
- Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
- Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.
Notes
History