Power module

Image (mathematics)

Voltage

Electromagnetic interference

Noise (video)

Computer science

Quantum mechanics

Engineering

Power (physics)

Power density

Power MOSFET

Silicon carbide

Artificial intelligence

High voltage

Metallurgy

Materials science

Electrical engineering

Physics

Partial discharge

Transistor

MOSFET

IEEE Transactions on Power Electronics

The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10 kV is expected to revolutionize medium- and high-voltage systems. However, present power module packages are limiting the performance of these unique switches. The objective of this research is to push the boundaries of high-density, high-speed, 10-kV power module packaging. The proposed package addresses the well-known electromagnetic and thermal challenges, as well as the prominent electrostatic and electromagnetic interference (EMI) issues associated with high-speed, 10-kV devices. The high-speed switching and high voltage rating of these devices causes significant EMI and high electric fields. Existing power module packages are unable to address these challenges, resulting in detrimental EMI and partial discharge that limit the converter operation. This article presents the design and testing of a 10-kV SiC mosfet power module that switches at a record 250 V/ns without compromising the signal and ground integrity due ...

10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field