Physics

Cathodoluminescence

Meteorology

Nanotechnology

Organic chemistry

Rutherford backscattering spectrometry

Activation energy

Analytical Chemistry (journal)

Electron mobility

Physical chemistry

Luminescence

Chemistry

Thin film

Metallurgy

Materials science

Condensed matter physics

Annealing (glass)

Acceptor

Atmospheric temperature range

Ion implantation

Chromatography

Optoelectronics

Doping

Secondary ion mass spectrometry

Arrhenius plot

Applied Physics Letters

A high activation ratio of acceptors to Mg ions implanted into a homoepitaxial GaN layer was achieved through an ultra-high-pressure annealing (UHPA) process. Capless annealing under a nitrogen pressure of 1 GPa in a temperature range of 1573–1753 K activated acceptors without thermally decomposing the GaN layer. Conventional rapid thermal annealing leads to a serious decomposition at 1573 K, even with an AlN protective cap. The sample annealed at 1673 K under UHPA exhibited very intense cathodoluminescence in near-band edge and donor-acceptor-pair band emissions. The intensities were over one order of magnitude higher than those of the sample treated by conventional annealing. A Hall-effect measurement was obtained in the temperature range of 275–500 K for the UHPA sample. The obtained hole concentration and mobility at 300 K were 3.6 × 1016 cm−3 and 24.1 cm2 V−1 s−1, respectively. The mobility value was close to that of an epitaxial p-type GaN with the same doping concentration. An Arrhenius plot of hole concentrations showed that the acceptor concentration and ionization energy were separately estimated to be (2.6 ± 0.8) × 1018 cm−3 and 212 ± 5 meV, respectively. By comparing the Mg concentrations obtained from secondary ion mass spectrometry, the acceptor activation ratio (acceptor concentration/Mg concentration) of the UHPA samples exceeded 70%. These results suggest that the UHPA process as a postimplantation annealing technique is promising for the fabrication of GaN-based power devices with selective area doping.

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing