An Intrinsically Stretchable High-Performance Polymer Semiconductor with Low Crystallinity

Published on Nov 1, 2019in Advanced Functional Materials18.808
路 DOI :10.1002/ADFM.201905340
Yu Zheng9
Estimated H-index: 9
(Stanford University),
Ging-Ji Nathan Wang18
Estimated H-index: 18
(Stanford University)
+ 13 AuthorsZhenan Bao180
Estimated H-index: 180
(Stanford University)
Sources
Abstract
This work was supported by Air Force Office of Scientific Research (Grant No. FA9550-18-1-0143) for financial support. M.N. acknowledges financial support from the European Commission through a Marie-Curie Individual Fellowship (EC Grant Agreement Number: 747461). H.T. was supported by an appointment to the Intelligence Community Postdoctoral Research Fellowship Program at Stanford University, administered by Oak Ridge Institute for Science and Education through an interagency agreement between the U.S. Department of Energy and the Office of the Director of National Intelligence. S.Z. and X.G. thank the financial support from U.S. Department of Energy, Office of Science, Office of Basic Energy Science under award number DE-SC0019361 and National Science Foundation Office of Integrative Activities #1757220. J.M. acknowledges Samsung Scholarship for financial support. Part of this work was performed at the Stanford Nano Shared Facilities (SNSF), supported by the National Science Foundation under award ECCS-1542152. GIXD measurement was carried out at the Stanford Synchrotron Radiation Laboratory (SSRL), a national user facility operated by Stanford University on behalf of the U.S. Department of Energy, Office of Basic Energy Sciences.
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