Characterization of Layer Number of Two-Dimensional Transition Metal Diselenide Semiconducting Devices Using Si-Peak Analysis

Volume: 2019, Pages: 1 - 7
Published: Sep 10, 2019
Abstract
Atomically thin materials such as semiconducting transition metal diselenide materials, like molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2), have received intensive interests in recent years due to their unique electronic structure, bandgap engineering, ambipolar behavior, and optical properties and have motivated investigations for the next-generation semiconducting electronic devices. In this work, we show a nondestructive method...
Paper Details
Title
Characterization of Layer Number of Two-Dimensional Transition Metal Diselenide Semiconducting Devices Using Si-Peak Analysis
Published Date
Sep 10, 2019
Volume
2019
Pages
1 - 7
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