Data-driven and probabilistic learning of the process-structure-property relationship in solution-grown tellurene for optimized nanomanufacturing of high-performance nanoelectronics

Two-dimensional (2-D) semiconductors have been intensely explored as alternative channel materials for future generation ultra-scaled transistor technology [1], [2], [3], [4], [5], [6], [7], [8]. However, significant roadblocks (e.g., poor carrier mobilities [9], [10], [11], instability [4,5,10], and vague potential in scaling-up [10,12–15]) exist that prevent the realization of the current state-of-the-art 2-D materials’ potential for...