Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation

Science56.90
Volume: 362, Issue: 6416, Pages: 817 - 821
Published: Nov 16, 2018
Abstract
Wafer-scale hBN crystalline films Although wafer-scale polycrystalline films of insulating hexagonal boron nitride (hBN) can be grown, the grain boundaries can cause both scattering or pinning of charge carriers in adjacent conducting layers that impair device performance. Lee et al. grew wafer-scale single-crystal films of hBN by feeding the precursors into molten gold films on tungsten substrates. The low solubility of boron and nitrogen in...
Paper Details
Title
Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation
Published Date
Nov 16, 2018
Journal
Volume
362
Issue
6416
Pages
817 - 821
Citation AnalysisPro
  • Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
  • Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.