Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In2Se3

Volume: 29, Issue: 20
Published: Feb 25, 2019
Abstract
High‐density memory is integral in solid‐state electronics. 2D ferroelectrics offer a new platform for developing ultrathin electronic devices with nonvolatile functionality. Recent experiments on layered α‐In 2 Se 3 confirm its room‐temperature out‐of‐plane ferroelectricity under ambient conditions. Here, a nonvolatile memory effect in a hybrid 2D ferroelectric field‐effect transistor (FeFET) made of ultrathin α‐In 2 Se 3 and graphene is...
Paper Details
Title
Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In2Se3
Published Date
Feb 25, 2019
Volume
29
Issue
20
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