Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid

With the growing demand for wearable electronic devices in recent years, flexible memory devices have attracted great interest among researchers. Here we report a flexible resistive memory device based on a hybrid of MoS2 and reduced graphene oxide (rGO). The device shows not only a low operating voltage (about 0.4 V), but also multilevel states by controlling the compliance current. In addition, it exhibits long retention time, high...