Ring oscillator

Image (mathematics)

Electrical engineering

Physics

Engineering

Artificial intelligence

Composite material

Voltage

Nanotechnology

Transistor

Cryogenics

Materials science

Amplifier

Electronic engineering

Characterization (materials science)

Cryogenic temperature

Computer science

CMOS

Optoelectronics

Quantum mechanics

Nanometre

Noise (video)

IEEE Journal of the Electron Devices Society

Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact model based on MOS11 and PSP was developed. In addition to reproducing the device dc characteristics, the accuracy and validity of the compact models are demonstrated by comparing time- and frequency-domain simulations of complex circuits, such as a ring oscillator and a low-noise amplifier, with the measurements at 4 K.

Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures