Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices
Abstract
Fabrication of GaN-on-diamond structure by bonding technology is becoming more and more attractive for high-power GaN devices. However, researches on low temperature bonding between GaN and diamond is still not well developed. This work accomplished a GaN-diamond bonding at room temperature by a modified surface-activated-bonding (SAB) method for the first time. The microstructure and composition of the bonding interface were analyzed by using...
Paper Details
Title
Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices
Published Date
Mar 20, 2018
Journal
Volume
150
Pages
148 - 151
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