Surface roughness

Physics

Power bandwidth

Bandwidth (computing)

CMOS

Biology

Klystron

Optics

Voltage

Beam (structure)

Amplifier

RF power amplifier

Oscillation (cell signaling)

Computer science

Quantum mechanics

Optoelectronics

Genetics

Telecommunications

Physics of Plasmas

A ladder-type Extended Interaction Klystron (EIK) with unequal-length slots in the G-band is proposed and designed. The key parameters of resonance cavities working in the π mode are obtained based on the theoretical analysis and 3D simulation. The influence of the device fabrication tolerance on the high-frequency performance is analyzed in detail, and it is found that at least 5 μm of machining precision is required. Thus, the dynamic tuning is required to compensate for the frequency shift and increase the bandwidth. The input and output coupling hole dimensions are carefully designed to achieve high output power along with a broad bandwidth. The effect of surface roughness of the metallic material on the output power has been investigated, and it is proposed that lower surface roughness leads to higher output power. The focusing magnetic field is also optimized to 0.75 T in order to maintain the beam transportation and achieve high output power. With 16.5 kV operating voltage and 0.30 A beam current, the output power of 360 W, the efficiency of 7.27%, the gain of 38.6 dB, and the 3 dB bandwidth of 500 MHz are predicted. The output properties of the EIK show great stability with the effective suppression of oscillation and mode competition. Moreover, small-signal theory analysis and 1D code AJDISK calculations are carried out to verify the results of 3D PIC simulations. A close agreement among the three methods proves the relative validity and the reliability of the designed EIK. Thus, it is indicated that the EIK with unequal-length slots has potential for power improvement and bandwidth extension.

Design and optimization of G-band extended interaction klystron with high output power