Electronic and optical properties of GaN under pressure: DFT calculations

Volume: 31, Issue: 32, Pages: 1750261 - 1750261
Published: Dec 18, 2017
Abstract
Optical and electronic properties of ZB, RS and WZ structures of gallium nitride (GaN) are studied in equilibrium and under pressure using the first-principles calculation in the density functional theory (DFT) framework to obtain quantities like dielectric function, loss function, reflectance and absorption spectra, refractive index and their relation parameters. The electronic properties are studied using EV-GGA and GGA approximations and the...
Paper Details
Title
Electronic and optical properties of GaN under pressure: DFT calculations
Published Date
Dec 18, 2017
Volume
31
Issue
32
Pages
1750261 - 1750261
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