Robust ferromagnetism carried by antiferromagnetic domain walls
Abstract
Ferroic materials, such as ferromagnetic or ferroelectric materials, have been utilized as recording media for memory devices. A recent trend for downsizing, however, requires an alternative, because ferroic orders tend to become unstable for miniaturization. The domain wall nanoelectronics is a new developing direction for next-generation devices, in which atomic domain walls, rather than conventional, large domains themselves, are the active...
Paper Details
Title
Robust ferromagnetism carried by antiferromagnetic domain walls
Published Date
Feb 14, 2017
Journal
Volume
7
Issue
1
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