The influence of acoustic-dislocation interaction on intensity of the bound exciton recombination in initial and irradiated GaAsP LEDs structures

Volume: 102, Pages: 88 - 93
Published: Feb 1, 2017
Abstract
null null Acoustic-excitant interaction of GaAsP light emitting diodes (initial and irradiated by 2 MeV electrons) was studied. Structure based on GaAs null 1 - х null P null х null null solid solutions, grown by epitaxy from the vapor phase, were the object of the research. It was observed that ultrasonic treatment (UST) results in the drop of the emitting intensity of structures, which relaxes to the previous values after ultrasound...
Paper Details
Title
The influence of acoustic-dislocation interaction on intensity of the bound exciton recombination in initial and irradiated GaAsP LEDs structures
Published Date
Feb 1, 2017
Volume
102
Pages
88 - 93
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