All-Metallic Vertical Transistors Based on Stacked Dirac Materials
Abstract
It is an ongoing pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional...
Paper Details
Title
All-Metallic Vertical Transistors Based on Stacked Dirac Materials
Published Date
Mar 3, 2015
Volume
2015
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