Influence of sulfurization temperature on optoelectric properties of Sn_xS_y thin films

SnxSy thin films were prepared in a way that Sn thin films were firstly vacuum-deposited on glass substrates through thermal evaporation and then the obtained Sn thin films were vulcanized for 45 min at 210,240 or 270 ℃. The optical and electrical properties of the films vulcanized at different temperatures were investigated. The results show that, with increasing vulcanization temperature, the direct energy gap, Hall mobility and carrier...