Original paper

Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells

Volume: 7, Issue: 1
Published: Dec 21, 2016
Abstract
Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms and sizeable coupling between spin and orbital motion of charge carriers. Here we focus on Ge, which, by matching those criteria, is rapidly emerging as a prominent candidate for shuttling spin quantum bits...
Paper Details
Title
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
Published Date
Dec 21, 2016
Volume
7
Issue
1
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