Stretching and Breaking of Ultrathin MoS2
Abstract
We report on measurements of the stiffness and breaking strength of monolayer MoS2, a new semiconducting analogue of graphene. Single and bilayer MoS2 is exfoliated from bulk and transferred to a substrate containing an array of microfabricated circular holes. The resulting suspended, free-standing membranes are deformed and eventually broken using an atomic force microscope. We find that the in-plane stiffness of monolayer MoS2 is 180 ± 60...
Paper Details
Title
Stretching and Breaking of Ultrathin MoS2
Published Date
Nov 16, 2011
Journal
Volume
5
Issue
12
Pages
9703 - 9709
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History