Undercooling, crystal growth and grain structure of levitation melted pure Ge and GeSn alloys
Abstract
Using containerless electromagnetic (EM) levitation, pure Ge, Ge-0.39 at% Sn and Ge-10 at% Sn alloys were undercooled by up to 426, 404 and 334 K, respectively. The crystal growth velocities in undercooled melts were measured with a photodiode technique. Crystal growth behavior was found to fall into three categories of lateral growth (LG) at low, continuous growth (CG) at moderate, and rapid growth (RG) at high undercoolings, leading to various...
Paper Details
Title
Undercooling, crystal growth and grain structure of levitation melted pure Ge and GeSn alloys
Published Date
Jun 1, 1996
Journal
Volume
44
Issue
6
Pages
2437 - 2443
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