Preparation and characterization of MOCVD bismuth telluride thin films

The thermoelectric, electric and structural properties of Bi2Te3 thin films grown by MOCVD have been investigated. The Seebeck coefficient shows that all the samples were n-type conductors decreasing from 213 to 129 μV/K when the carrier concentration increases from 9×1019 to 3×1020 cm−3. For high substrate temperature, good orientation of crystallites has been observed which can be directly related to the best values of Seebeck coefficient...