Growth of p- and n-type bismuth telluride thin films by co-evaporation
Abstract
Both n- and p-type bismuth telluride thin films have been deposited by co-evaporator on glass substrates. The conditions for deposition have been investigated as a function of substrate temperature (Ts) and flux ratio (Fr=F(Bi)/F(Te)) and optimised to achieve a high thermoelectric power factor. The quality of the deposited films, e.g. structure, composition and morphology, has been examined by X-ray diffraction (XRD), energy-dispersive X-ray...
Paper Details
Title
Growth of p- and n-type bismuth telluride thin films by co-evaporation
Published Date
Jan 1, 2001
Journal
Volume
222
Issue
1-2
Pages
82 - 87
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