Shallow n-type doping by transition-metal impurities (Hf, Zr, or Ti) in amorphous In2O3

Volume: 61, Issue: 6, Pages: 933 - 937
Published: Sep 27, 2012
Abstract
Through first-principles electronic-structure calculations, we suggest that because the transitionmetal (TM)-d levels are located deep within the conduction band, TM (M = Hf, Zr, or Ti)-doped amorphous In2O3 (a-In2O3) can provide shallow donors, even though the effective mass of the a-In2O3 is slightly increased. We examined the microscopic structure of the doped oxides. The effective coordination number of In is little changed by the doping....
Paper Details
Title
Shallow n-type doping by transition-metal impurities (Hf, Zr, or Ti) in amorphous In2O3
Published Date
Sep 27, 2012
Volume
61
Issue
6
Pages
933 - 937
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