250 keV Ar2+ ion beam induced grain growth in tin oxide thin films
Volume: 203, Issue: 17-18, Pages: 2410 - 2414
Published: Jun 1, 2009
Abstract
Nanocrystalline tin oxide (SnO2) thin films of 200 nm thickness were deposited on quartz and sapphire substrates by e-beam evaporation method. The substrate temperature was kept at 200 °C to enhance the surface diffusion of the atoms. The films were characterized by atomic force microscopy (AFM), glancing angle X-ray diffraction (GAXRD) and UV-visible spectroscopy for morphological, structural and optical characterization respectively. The...
Paper Details
Title
250 keV Ar2+ ion beam induced grain growth in tin oxide thin films
Published Date
Jun 1, 2009
Volume
203
Issue
17-18
Pages
2410 - 2414
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