Initial growth of interfacial oxide during deposition of HfO2 on silicon
Abstract
Interfacial chemistry of Hf∕Si, HfO2∕SiO2∕Si, and HfO2∕Si is investigated by x-ray photoelectron spectroscopy in order to understand the interfacial layer formation mechanism. Deposition of Hf and HfO2 films was carried out on Si wafers by electron-beam evaporation with oxygen backfill. We show that the interfacial layer formation takes place predominantly at the initial stage of the HfO2 film deposition. Temporary direct bonding between Hf...
Paper Details
Title
Initial growth of interfacial oxide during deposition of HfO2 on silicon
Published Date
Jul 8, 2004
Journal
Volume
85
Issue
2
Pages
215 - 217
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