Electroluminescence of Commercial Gap Green-Light-Emitting Diodes

The structure of the low-temperature spectrum of GaP(N) green-light-emitting diodes at 77 and 300 K was due to the recombination of excitons bound to N atoms and NN pairs. All spectral lines were identified. It was concluded that the half-width of the main luminescence line (hν = 2.175 eV, NN1) was due to natural broadening of the initial and final recombination states. It was found that increasing the current through the p–n-junction resulted...