Quantum oscillations and interference effects in strained n- and p-type modulation doped GaInNAs/GaAs quantum wells

We have performed magnetoresistance measurements on n- and p-type modulation doped GaInNAs/GaAs quantum well (QW) structures in both the weak (B < 0.08 T) and the high magnetic field (up to 18 T) at 75 mK and 6 K. We observe that the quantum oscillations in and quantum Hall effect (QHE) plateaus in are affected from the presence of the nitrogen in the III–V lattice. The enhancement of N-related scatterings and electron effective mass with...