V.P. Tartachnyk
National Academy of Sciences of Ukraine
Charge carrierElectron beam processingEpitaxyIrradiationOpticsPhysicsElectron transferElectronic band structureDrop (liquid)Solid solutionElectronLuminescenceLine (formation)Brillouin zoneLight-emitting diodeExcitonAtomic physicsMaterials scienceElectrical conductorCondensed matter physicsGreen-lightGallium phosphideThermal effectElectroluminescence spectraElectroluminescenceMolecular physicsSpectral lineOptoelectronicsCrystalIntensity (heat transfer)DiodeEmission spectrum
8Publications
2H-index
5Citations
Publications 11
Newest
#1R.M. Vernydub (National Pedagogical Dragomanov University)H-Index: 1
#2O.I. Kyrylenko (National Pedagogical Dragomanov University)H-Index: 1
Last. V.P. TartachnykH-Index: 2
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#1R.M. VernydubH-Index: 1
#3O.I. KyrylenkoH-Index: 1
Last. V.V. ShlapatskaH-Index: 1
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#3P.G. LitovchenkoH-Index: 6
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#1G. GaydarH-Index: 1
#2O.V. KonorevaH-Index: 2
Last. V.P. TartachnykH-Index: 2
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Abstract The bond models are presented that explain the S -type anomaly of GaP LEDs’ electrical characteristics at temperatures Т ≤ 120 K. A possible mechanism of negative differential resistance appearing in current-voltage characteristics is proposed, based on the features of the gallium phosphide complex band structure. The conductive zone absolute minimum in this crystal is near the Brillouin zone end. Due to the positive internal bond, controlled by the current, intervalley electron transfe...
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#1O.V. KonorevaH-Index: 2
#2Ya. M. OlikhH-Index: 2
Last. V.V. ShlapatskaH-Index: 1
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Abstract Acoustic-excitant interaction of GaAsP light emitting diodes (initial and irradiated by 2 MeV electrons) was studied. Structure based on GaAs 1 - х P х solid solutions, grown by epitaxy from the vapor phase, were the object of the research. It was observed that ultrasonic treatment (UST) results in the drop of the emitting intensity of structures, which relaxes to the previous values after ultrasound termination. The possible reason of observed changes concerning nonequilibrium dislocat...
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#1O. KonorevaH-Index: 1
Last. V.P. TartachnykH-Index: 2
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Electroluminescence spectra of red GaP light-emitting diodes were investigated. Besides the main emission line hν = 1.845 eV, it was detected the additional short-wave component hν = 2.206 eV the existence of which is connected with donor-acceptor transitions between Zn-Sn pairs. It was observed intensity increase of this line at low currents (I 90 mA) due to the thermal effect. The nature of the spectral lines anomalous broadening was discussed.
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#3O.V. KonorevaH-Index: 2
Last. V.V. ShlapatskaH-Index: 1
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Last. V.P. TartachnykH-Index: 2
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#1O. N. Gontaruk (NASU: National Academy of Sciences of Ukraine)
#2A. V. Kovalenko (NASU: National Academy of Sciences of Ukraine)
Last. V.P. Tartachnyk (NASU: National Academy of Sciences of Ukraine)H-Index: 2
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The structure of the low-temperature spectrum of GaP(N) green-light-emitting diodes at 77 and 300 K was due to the recombination of excitons bound to N atoms and NN pairs. All spectral lines were identifi ed. It was concluded that the half-width of the main luminescence line (hν = 2.175 eV, NN1) was due to natural broadening of the initial and fi nal recombination states. It was found that increasing the current through the p–n-junction resulted in the growth of the N-line intensity relative to ...
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